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<title>Martin Francis P (Research Scholar)</title>
<link href="http://starc.stthomas.ac.in:8080/xmlui/xmlui/handle/123456789/441" rel="alternate"/>
<subtitle/>
<id>http://starc.stthomas.ac.in:8080/xmlui/xmlui/handle/123456789/441</id>
<updated>2026-04-24T12:44:30Z</updated>
<dc:date>2026-04-24T12:44:30Z</dc:date>
<entry>
<title>Investigations on silver incorporated RF sputtered ZnO thin films</title>
<link href="http://starc.stthomas.ac.in:8080/xmlui/xmlui/handle/123456789/442" rel="alternate"/>
<author>
<name>Francis, Melda</name>
</author>
<author>
<name>Kuruvilla, Anu</name>
</author>
<author>
<name>Francis, Martin P</name>
</author>
<author>
<name>Lakshmi, M</name>
</author>
<id>http://starc.stthomas.ac.in:8080/xmlui/xmlui/handle/123456789/442</id>
<updated>2025-02-11T10:05:04Z</updated>
<published>2020-06-27T00:00:00Z</published>
<summary type="text">Investigations on silver incorporated RF sputtered ZnO thin films
Francis, Melda; Kuruvilla, Anu; Francis, Martin P; Lakshmi, M
: In this work, ZnO thin films were fabricated using RF Magnetron Sputtering technique on&#13;
ITO substrates. The operating parameters time of deposition, Argon working pressure, distance&#13;
between target and substrate, oxygen pressure, RF power etc. were optimized so as to get good quality&#13;
ZnO thin films. The prepared films were characterised using various techniques like XPS, SEM, EDS&#13;
etc. It was observed that the sheet resistance of the pristine ZnO film was around 200 MΩcm-1&#13;
even&#13;
when coated on ITO substrates. For device level application the resistance of the film must be low.&#13;
Therefore silver was incorporated by sputtering, and it served the purpose of reducing the sheet&#13;
resistance of pristine ZnO film. The Ag incorporated films were also characterised by the above&#13;
mentioned techniques. Detailed compositional analysis was done using depth profiling method of XPS.&#13;
Resistance measurements were also done in these samples. The sheet resistance decreased (from ~ 200&#13;
MΩcm-1&#13;
) to a range of about 500 Ωcm-1 by silver incorporation.
</summary>
<dc:date>2020-06-27T00:00:00Z</dc:date>
</entry>
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